Special Seminar: Greg Holloway
Metal-oxide-semiconductor (MOS) Si quantum dots
Greg Holloway, IQC
Electrostatically defined quantum dots provide a flexible implementation for scalable spin-based quantum information processing. Recently Si has emerged as a promising platform for these systems, due to its long electron spin coherence times, and its compatibility with numerous fabrication processes. In this talk I will give a detailed description of the device architecture, as well as a description of transport through Si quantum dots.