Metal-oxide-semiconductor (MOS) Si quantum dots
Greg Holloway, IQC
Electrostatically defined quantum dots provide a flexible implementation for scalable spin-based quantum information processing. Recently Si has emerged as a promising platform for these systems, due to its long electron spin coherence times, and its compatibility with numerous fabrication processes. In this talk I will give a detailed description of the device architecture, as well as a description of transport through Si quantum dots. Experimental results using multiple dots in close proximity to implement a single electron charge sensor will also be presented. These multi dot systems are used to measure the charge of one quantum dot down to the single electron regime, and to observe novel hysteretic transport phenomena.
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