RAC1 Journal Club/Seminar Series
The study of high-efficiency magnetization reversal using spin-orbit coupling
Dongseuk Kim, Quantum Technology Institute, KRISS, South Korea
In recent years, the magnetic random-access memory (MRAM) have been attracting attention as a next generation memory device due to their fast switching speed and non-volatility characteristics. The biggest challenge for the switching device using a magnetic material is an easy magnetization reversal.