RIE: metals and III-V [OXFORD-metalRIE]

Vendor: Oxford Instruments

Model: Plasmalab system 100 ICP380

Purpose: Plasma-based dry etching of metal thin films and III-V substrates (GaAs and InP)

Equipment wiki link

Equipment description:

This Oxford Plasmalab100 is an inductively coupled plasma (ICP) based system that is configured for dielectrics, metal and III-V etching with chlorine, fluorine and hydrocarbon-based plasmas. The system is equipped with He backside cooling and has a temperature controlled electrode. The ICP process module is connected to a single automated wafer transfer load lock. For more information about available processes and disallowed processes, please consult the equipment wiki page.

System features and options:

  • Gases available: Cl2, BCl3, SF6, C4F8, CHF3, H2, CH4, O2, N2, Ar
  • Standard configuration to handle 4″ wafers. 6″ wafer process available upon request
  • Mechanical clamp
  • High density 380 mm ICP Source (2 MHz, 3 kW)
  • 240 mm lower electrode (13.56 MHz, 300 W) with variable height
  • Fluid and electrical temperature control: 0 to 400℃
  • Typical operating pressure: 1 –100 mTorr
  • Laser and optical end point detection

Oxford plasma etching system for metals
Oxford plasma etching system for metals