Development of InSb Surface Quantum Wells for hybrid superconducting device applications
Abstract: Surface quantum well (QW) heterostructures in III-V semiconductors are compatible with proximitized superconductivity. They offer a scalable planar platform for superconductor-semiconductor systems, such as those suggested for topological quantum computation and those suitable for topological phase transitions involving Majorana zero modes. Amongst III-V binary semiconductors, indium antimonide (InSb) has the smallest electron effective mass, highest spin orbit coupling and largest Landé g-factor. Such material properties makes the pursuit of InSb QWs desirable for a number of quantum device applications including quantum sensing, quantum metrology, and quantum computing.
Unfortunately, high quality two-dimensional electron gases (2DEGs) in InSb QWs have so far been difficult to realize. InSb QWs have generally relied on the use of modulation doping for 2DEG formation, but these structures have frequently reported issues with parasitic parallel conduction and unstable carrier densities. We report on the transport characteristics of field effect 2DEGs in surface InSb quantum wells, which overcome these challenges and are suitable for future hybrid superconducting device applications.
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