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Probing silicon surfaces with magnetic resonanceExport this event to calendar

Wednesday, December 6, 2017 — 2:00 PM EST

Chandrasekhar Ramanathan

Silicon is a technologically versatile material – ubiquitous in microelectronics, solar cells, MEMS sensors, and a promising platform for spin-based quantum devices and computers. The paramagnetic dangling bonds defects present at almost all silicon surfaces – at the interface between the silicon and a surface oxide layer – can provide a highly-localized source of electronic spins that can be used to probe both local physics and chemistry. In this talk I will discuss two examples of our recent work where we exploit these dangling bond spins to probe local physics and chemistry of these surfaces using different magnetic resonance techniques.

Location 
RAC - Research Advancement Centre
2009
475 Wes Graham Way

Waterloo, ON N2L 6R2
Canada

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