Overcoming limitations of molecular beam epitaxy for high quantum efficiency nitride-based emitters
You are invited to join the Waterloo Institute for Nanotechnology (WIN) for their next seminar, "Overcoming limitations of molecular beam epitaxy for high quantum efficiency nitride-based emitters," featuring Czeslaw Skierbiszewski, fromthe Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland.
Abstract
In this work we show development of plasma assisted molecular beam epitaxy (PAMBE) for high quantum efficiency nitride laser diodes (LDs) and light emitting diodes (LEDs). The design of LDs covering spectral range from violet to green emission will be discussed. We will describe influence of growth conditions (nitrogen flux, growth temperature) for high external quantum efficiency LEDs by PAMBE technology. The advantage of p-type doping efficiency of PAMBE for efficient tunnel junctions (TJs) and novel vertically integrated by TJs nitride devices will be discussed.
About the speaker
Czeslaw Skierbiszewski completed his PhD at Institute of Physics Polish Academy of Sciences in 1993. Since 2001 he is a head of the Molecular Beam Epitaxy group at Institute of High Pressure Physics Polish Academy of Sciences. Currently he is working on growth of nitride based laser diodes and transistors.