Youngki Yoon

Professor, Electrical & Computer Engineering; Director, Nanotechnology Undergraduate Program

Research interests: modelling and computer simulations for emerging devices; quantum transport in low dimensional materials such as graphene

Biography

Professor Youngki Yoon’s research group focuses on understanding physics of non-equilibrium phenomena in nanosystems with relevance to device applications by means of modeling and simulations. Building on rigorous fundamental understanding, he has developed his own quantum transport simulator using Non-Equilibrium Green’s Function (NEGF) method. Atomistic simulations may enable predictive analysis of nanoscale devices for which direct experimental investigation can often be extremely challenging and prohibitively expensive.

He received his Ph.D. in Electrical and Computer Engineering from the University of Florida (Gainesville, FL) in 2008, where his research mainly focused on ballistic transport in carbon nanotube devices. Then he worked as a postdoctoral research at the University of California, Berkeley where he has done pioneering work in the field of non-equilibrium quantum transport, including the first demonstration of dissipative simulation using the NEGF formalism for the realistic size of devices (>200 nm) and the first-ever trial that included both phonon and roughness scattering for graphene nanoribbon transistors.

Education

  • PhD, Electrical and Computer Engineering, University of Florida, 2008

  • MS, Electrical and Computer Engineering, University of Florida, 2005

  • BS, Metallurgical Engineering, Korea University, 1999

Youngki Yoon

Research

Research Interests

  • Modeling and Computer Simulations for Emerging Devices

  • Quantum Transport through Novel Devices Based on Low-Dimensional Materials such as Graphene, Molybdenum Disulfide, Carbon Nanotubes and Nanowires

  • High Performance Computing for Nanodevice Simulations

  • Engineering Tool Development for Analysis and Optimization

Publications

Recent publications include:

  • Ganapathi, K.; Youngki Yoon; Lundstrom, M.; Salahuddin, S., "Ballistic  –  Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications," Electron Devices, IEEE Transactions on , vol.60, no.3, pp.958,964, March 2013

  • Yoon, Youngki; Salahuddin, Sayeef, "Dissipative transport in rough edge graphene nanoribbon tunnel transistors," Applied Physics Letters , vol.101, no.26, pp.263501,263501-4, Dec 2012

  • Youngki Yoon, Kartik Ganapathi, and Sayeef Salahuddin, “How Good can Monolayer MoS2 Transistors Be?” Nano Letters, 11(9), pp3768-3773, 2011

  • Choudhury, M.R.; Youngki Yoon; Guo, Jing; Mohanram, K., "Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability," Nanotechnology, IEEE Transactions on , vol.10, no.4, pp.727,736, July 2011

  • Yoon, Youngki; Nikonov, D.E.; Salahuddin, Sayeef, "Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green’s function method with real space approach," Applied Physics Letters, vol.98, no.20, pp.203503,203503-3, May 2011

  • Yoon, Youngki; Salahuddin, Sayeef, “Simulation of Carbon Heterostructures as Barrier Free Tunneling Transistors”, ECS Trans., Vol 35(3), pp253-258, 2011

  • Yoon, Youngki; Sung Hwan Kim; Salahuddin, Sayeef, "Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications," Applied Physics Letters , vol.97, no.23, pp.233504,233504-3, Dec 2010

  • Ganapathi, K.; Yoon, Youngki; Salahuddin, Sayeef, "Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance," Applied Physics Letters , vol.97, no.3, pp.033504,033504-3, Jul 2010

  • Yoon, Youngki; Salahuddin, Sayeef, "Barrier-free tunneling in a carbon heterojunction transistor," Applied Physics Letters , vol.97, no.3, pp.033102,033102-3, Jul 2010

  • Yoon, Youngki; Salahuddin, Sayeef, "Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors," Applied Physics Letters , vol.96, no.1, pp.013510,013510-3, Jan 2010

  • X. Wang, X. Li, L. Zhang, Y. Yoon, P. Weber, H. Wang, J. Guo, and H. Dai, “N-Doping of Graphene Through Electrothermal Reactions with Ammonia”, Science, vol. 324, no. 5928, pp. 768-771 (May 2009).

  • B. Liu, M. McCarthy, Y. Yoon, D. Kim, Z. Wu, F. So, P. H. Holloway, J. R. Reynolds, J. Guo, and A. G. Rinzler, “Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors”, Advanced Materials, vol. 20, no. 19, pp. 3605-3609 (Oct. 2008).

  • Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo, “Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs”, IEEE Trans. on Electron Devices, vol. 55, no. 9, pp. 2314-2323 (Sep. 2008).

  • S. Hong, Y. Yoon, and J. Guo, “Metal-Semiconductor Junction of Graphene Nanoribbons”, Applied Physics Letters, vol. 92, no. 8, p. 083107 (Feb. 2008).

  • Y. Yoon, J. Fodor, and J. Guo, “A Computational Study of Vertical Partial-Gate Carbon-Nanotube FETs”, IEEE Trans. on Electron Devices, vol. 55, no. 1, p. 283-288 (Jan. 2008).

Please see Youngki Yoon's Google Scholar profile for a current list of his peer-reviewed articles.

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