ECE Seminar: High-Frequency Noise Modeling and Characterization of Nanoscale MOSFETs Export this event to calendar

Thursday, February 1, 2018 — 2:00 PM to 3:00 PM EST

SPEAKER: Xuesong Chen, Ph.D.

INVITED BY: Invited by PROFESSOR Lan Wei and PROFESSOR Slim Boumaiza

ABSTRACT: High-frequency noise modeling and characterization of nanoscale MOSFETs are essential driving forces for highly scaled CMOS technology to be used in radio-frequency applications. Continuous downscaling increases the operating frequency of the MOSFETs, reduces the power supply voltage but does not scale noise accordingly. This makes the noise issue of future low-power technology more prominent and therefore accurate noise modeling more important. In this seminar, I will present our work on the noise modeling and characterization of nanoscale MOSFETs which include three major projects. The first is an algorithm that solves the problem of noise factor deembedding in which the active two-port device is surrounded by a four-port parasitic network. The second project is a novel Z-parameter based approach to extract the gate resistance of MOSFETs which is a one of the major noise contributors. The third project is on the channel noise modeling for nanoscale MOSFETs based on the concept of shot noise suppression.

BIOGRAPHY: Xuesong Chen received his B.S. degree in Applied Physics from the University of Science and Technology of China (USTC) in 2012. He received his Ph.D. degree in Electrical and Computer Engineering from McMaster University in 2017. His research focuses on the high-frequency noise modeling of nanoscale MOSFETs.

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